s mhop microelectronics c orp. a product summary v dss i d r ds(on) (m ) max 30v 4.5a 40 @ vgs= 4.5v 33 @ vgs= 10v features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. n-channel enhancement mode field effect transistor www.samhop.com.tw dec,19,2013 1 details are subject to change without notice. sot23 g s d STS3420 ver 1.1 green product thermal characteristics 100 thermal resistance, junction-to-ambient r ja a c/w s g d symbol v ds v gs i dm a i d units parameter 30 4.5 18 v v 12 gate-source voltage drain-source voltage absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous -pulsed b a t c =25 c w p d c 1.25 -55 to 150 t c =25 c maximum power dissipation operating junction and storage temperature range t j , t stg t c =70 c 3.6 a t c =70 c 0.8 w a a 53 @ vgs= 2.5v
STS3420 v gs = 12v , v ds =0v 30 1 100 0.5 26 13 430 68 55 5.6 8 17.5 25 v ds =15v,v gs =0v v dd =15v i d =1a v gs =10v r gen = 6 ohm v gs =10v , i d =2.3a v ds =5v , i d =2.3a v ds =24v , v gs =0v v gs =0v , i d =250ua v gs =4.5v , i d =2a 30 0.78 1.5 33 40 symbol min typ max units bv dss v i gss na v gs(th) v g fs s c iss pf c oss pf c rss pf t d(on) ns t r ns t d(off) ns t f ns switching characteristics rise time turn-off delay time fall time turn-on delay time m ohm input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage reverse transfer capacitance on characteristics m ohm c c 8.1 q g nc total gate charge v ds =15v,i d =2.3a,v gs =10v www.samhop.com.tw dec,19,2013 2 0.8 1.7 nc q gs nc q gd gate-drain charge gate-source charge v ds =15v,i d =2.3a, v gs =10v drain-source diode characteristics v gs =0v,i s = 1a 0.77 v sd diode forward voltage 1.2 v notes _ _ _ f=1.0mhz v ds =v gs , i d =250ua ver 1.1 v ds =15v,i d =2.3a,v gs =4.5v 4.5 nc a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. v gs =2.5v , i d =1.8a 39 53 m ohm
www.samhop.com.tw dec,19,2013 3 tj( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current figure 4. on-resistance variation with drain vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation tj, junction temperature( c ) figure 6. breakdown voltage variation and gate voltage current and temperature with temperature with temperature STS3420 ver 1.1 20 16 8 4 0 0 0.5 1.0 1.5 2.0 2.5 3.0 vgs =1. 5v v gs=2.5 v vgs =2 v vgs=4.5v vgs=10v 15 12 9 6 3 0 0 0.5 3.0 2.5 2.0 1.5 1.0 -55 c 25 c tj=125 c 90 75 60 45 30 15 1 v gs =10v v gs =4.5v 2.0 1.8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 125 150 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua v gs =2.5v 12 120 16 12 48 v gs = 4.5v i d = 2a v gs = 10v i d = 2.3a v gs = 2.5v i d = 1.8a v ds = v gs i d = 250ua
www.samhop.com.tw dec,19,2013 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area gate-source voltage variation with source current STS3420 ver 1.1 90 75 60 45 30 15 0 10 0 i d =2.3a 25 c 75 c 125 c 20.0 10.0 1.0 0 0.3 0.6 0.9 1.2 1.5 5.0 10 8 6 4 2 0 v ds =15v i d =2.3a 0.1 1 10 10 1 0.01 v gs =10v single pulse t a =25 c r d s (o n ) lim i t 0.1 dc 1 0s 1 0 0 m s 1 ms 10 0us 10 u s 8 6 4 2 25 c 125 c 75 c 0 10 8 6 4 2 c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance crss coss ciss 600 500 400 300 200 100 0 10 15 20 25 30 0 5 switching time(ns) rg, gate resistance( ) figure 11. switching characteristics 110 100 1 10 100 300 vds=15v,id=1a vgs=10v td(on) td(off ) tr tf
www.samhop.com.tw dec,19,2013 5 STS3420 ver 1.1 norm aliz ed transien t therma l r esis tance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve 0.01 0. 1 1 10 0.0000 1 0.000 1 0.001 0.01 0. 1 1 10 100 1000 single pulse t 1 t 2 1. r thj a (t)=r (t) * r ja 2. r ja =s ee datasheet 3. t jm- t a =p dm *r ja (t) 4. duty cycle, d=t 1 /t 2 th th th 0.01 0.02 0.5 0.1 0.05 p dm 0.2
www.samhop.com.tw dec,19,2013 6 STS3420 ver 1.1 package outline dimensions sot 23 d e e1 e e1 b 1 2 3 l detail "a" millimeters inches symbols d e 2.700 3.100 2.200 3.000 e1 1.200 1.700 e e1 b 0.350 0.510 c 0.090 0.200 a a1 a a1 0.000 0.102 0.887 1.200 l1 l l1 0.550 ref. 0 o 10 o 0.106 0.122 0.087 0.118 0.047 0.067 0.014 0.020 0.004 0.008 0.000 0.004 0.035 0.047 0.022 ref. 0 o 10 o min max min max 0.850 1.150 0.033 0.045 1.800 2.100 0.071 0.083 0.450 ref. 0.018 ref. detail "a"
www.samhop.com.tw dec,19,2013 7 STS3420 ver 1.1 sot-23 tape and reel data sot-23 carrier tape sot-23 reel 3.20 2 0.10 3.00 2 0.10 1.33 2 0.10 1.00 +0.25 1.50 +0.10 8.00 +0.30 -0.10 1.75 2 0.10 3.50 2 0.05 4.00 2 0.10 4.00 2 0.10 2.00 2 0.05 0.20 2 0.02 178 178 2 1 60 2 1 9.00 2 0.5 12.00 2 0.5 13.5 ! ! 2 0.5 2.00 2 0.5 10.0 18.00 5.00 8 @ v unit: @ r g s k h w1 w n m 10.5 reel size tape size unit: @ package sot-23 a0 b0 k0 d0 d1 e e1e2p0 p1p2 t tr feed direction
8 sot-23 xx STS3420 ver 1.1 www.samhop.com.tw dec,19,2013 t20 product no. production year (2009 = 9, 2010 = a.....) production month (1,2 ~ 9, a,b,c) top marking definition
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